A reaction science high-voltage scanning transmission electron microscope can penetrate very thick samples compared to a typical 200-kV electron microscope. In particular, a major feature of this device is that it allows in situ observations of chemical reactions such as metal oxidation and catalytic reactions by various gases.

An atomic resolution analysis electron microscope with the world's highest STEM-HAADF image resolution of 78 pm is equipped with a spherical aberration corrector in the irradiation system. When used together with EDS or EELS, atomic-level elemental analysis is possible.

An atomic resolution analysis electron microscope with the world's highest TEM/STEM image resolution is equipped with a spherical aberration corrector in the irradiation system and objective system. When used together with EDS or EELS, atomic-level elemental analysis is possible.

An electron microscope with an accelerating voltage of 200 kV can be attached to a wavelength dispersive X-ray spectrometer (WDX) in addition to EELS. It can measure cathodoluminescence (CL) light.

A field emission electron microscope with an acceleration voltage of 200 kV has a high resolution. It can provide observations with up to 1.5 million times direct magnification when using the TEM function.

A scanning electron microscope enables SEM observations while controlling the atmosphere, except for a vacuum. EDS provides elemental analysis and sample manipulation functions.

Electron gun / Thermionic emission W
TEM point resolution / ＜50.0 nm (SEM image)
Detector for analysis / EDS
Sample holder / Standard for cross-section observation

• Sample cross-section observations
• Real-time SEM / STEM observations
• Real-time 3D-EDS
• Real-time 3D-EBSD

• High-quality TEM sample preparation
• High-resolution SEM observations and EDS analyses

Ga mounted on the ion gun is ionized and irradiated as a focused ion beam onto the sample for processing.

Any shape can be processed using bitmap image data.

• Thin film sample preparation
• Image capturing with Digital Micrograph

A sample preparation device that forms a cross-section along the boundary between the region irradiated by ion beams perpendicular to the shielding plate set on the sample surface and etched by ion irradiation and the region cut off by the shielding plate. Sample processing status can be observed on the operation panel.

• Basic specifications:
  Acceleration voltage 0.1–2 kV
• Sample tilt angle: 0-45°
• Application: Removal of a damaged layer

We have various devices to realize functions such as cutting, mechanical polishing, chemical polishing, and sample processing for FIB.